This volume presents a coherent and detailed description of the field, and brings together leaders in theoretical research. The book discusses today's state-of-the-art, as well as tomorrow's tools: the supercell-pseudopotential method, the GW formalism, Quantum Monte Carlo, learn-on-the-fly molecular dynamics, finite-temperature treatments and more. A wealth of applications are included, from point defects to wafer bonding or the propagation of dislocation.
Publisher: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
Number of pages: 295
Weight: 1360 g
Dimensions: 235 x 155 x 19 mm
Edition: 2007 ed.
From the reviews:
"The silicon technologies and their successors ... owe much of their power to control of defects and dopants. ... it might be suitable for a graduate course, and that it would be appropriate for advanced researchers in physics, chemistry, materials science and engineering, and that it might be a convenient guide for the experimentalist ... . a specialist course book for theory graduate students ... . The hands-on theorist will find the various special topics helpful ... ." (Prof. M. Stoneham, Contemporary Physics, Vol. 48 (3), 2007)
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