This resource provides engineers with a comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBT), a semi-conductor technology that is expected to revolutionise the communications industry by offering low-cost, high-speed solutions for emerging communications needs. It offers practitioners and students a from-the-ground-up understanding of SiGe HBT devices and technology from a very broad perspective. The text covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with SiGe. This reference explains how to design, simulate, fabricate and measure a SiGe HBT, and offers an understanding of the optimization issues and design tradeoffs of SiGe HBTs and RF/microwave circuits built with this new technology.
Publisher: Artech House Publishers
Number of pages: 588
Weight: 995 g
Dimensions: 234 x 156 x 33 mm
You may also be interested in...
Please sign in to write a review
Simply reserve online and pay at the counter when you collect. Available in shop from just two hours, subject to availability.
Thank you for your reservation
Your order is now being processed and we have sent a confirmation email to you at
When will my order be ready to collect?
Following the initial email, you will be contacted by the shop to confirm that your item is available for collection.
Call us on or send us an email at
Unfortunately there has been a problem with your order
Please try again or alternatively you can contact your chosen shop on or send us an email at