Oxide Nanoelectronics: Volume 1292: Symposium Held November 29 - December 3, Boston, Massachusetts, U.S.A. - MRS Proceedings (Hardback)H. Hwang (editor), Harold Hwang (editor), Jeremy Levy (editor), J. Levy (editor), P. Makysymovych (editor), Peter Makysymovych (editor), G. Medeiros-Ribeiro (editor), Gilberto Medeiros-Ribeiro (editor), Rainer Waser (editor)
Hardback Published: 02/05/2011
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Symposium K, 'Oxide Nanoelectronics', was held November 29-December 3 at the 2010 MRS Fall Meeting in Boston, Massachusetts. The field of oxide nanoelectronics has grown tremendously in the last decade. Many striking empirical observations in a variety of oxide materials show great promise for ultrahigh-density storage, passive and active nanodevice creation, and functionality based on multiple properties (e.g., magnetic and ferroelectric). The prospect for band-device engineering in oxide heterostructures is comparable to what took place for III-V semiconductors roughly 30 years ago. The symposium that this volume is based on brought together researchers working in this new field to lay a materials-based foundation that can pave the way for major industrial use of these high-performance nanoelectronic systems. The presented topics included: the growth of new oxide materials and heterostructures using pulsed-laser deposition and molecular beam epitaxy; integration of oxides with silicon substrates; characterization of novel electronic and correlated-electron properties in oxide thin films and superlattices; nanoscale control of phase transitions and correlated properties; theory of oxide nanostructures; mixed ion-electronic conduction; magnetism; and oxide 2DEGs.
Publisher: Materials Research Society
Weight: 370 g
Dimensions: 228 x 152 x 15 mm
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