Hydrogen in Crystalline Semiconductors - Springer Series in Materials Science 16 (Paperback)
  • Hydrogen in Crystalline Semiconductors - Springer Series in Materials Science 16 (Paperback)

Hydrogen in Crystalline Semiconductors - Springer Series in Materials Science 16 (Paperback)

(author), (guest editor), (author), (author)
Paperback 363 Pages / Published: 29/06/1992
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This monograph arose out of the recognition of the importance of hydrogen in modern semiconductor technology. Hydrogen is a component of most chemicals used in the fabrication of electronic and photonic devices, is easily incorporated into semiconductors and it is a model impurity for studying defect reactions in solids. While writing this volume we have received a good deal of encourage- ment from our colleagues at AT&T Bell Laboratories, State University of New York at Albany and Lehigh University, and from collaborators at other institutions: to them we extend our sincere appreciation. In particular we would like to thank W. e. Dautremont-Smith, J. Lopata, V. Swamina- than, K. Bergman, L. e. Synder, P. Deak, J. T. Borenstein, T. S. Shi, D. Tul- chinsky, G. G. DeLeo, W. B. Fowler, G. D. Watkins and D. Kozuch for their crucial contributions to this work. We would also like to thank Mrs. Danuta Sowinska-Kahn for her unfailing expertise in preparing much of the art- work. Finally we owe a great debt to Helmut Lotsch of Springer-Verlag for his initial suggestion to write this book and then his patient and professional guidance in seeing the project to fruition. Murray Hill, NJ S. J. Pearton Albany, NY J. w. Corbett Bethlehem, P A M. Stavola October 1991 v Contents 1. Introduction ...2. Hydrogen Incorporation in Crystalline Semiconductors 4 2. l Techniques for Hydrogen Incorporation in Semiconductors ...5 2. 1. 1 Hydrogen Plasma Exposure...5 2. l. 2 Hydrogen Implantation ...

Publisher: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
ISBN: 9783540554912
Number of pages: 363
Weight: 575 g
Dimensions: 235 x 155 x 20 mm
Edition: Softcover reprint of the original 1st ed. 199

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