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This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.
Publisher: Springer Verlag GmbH
Number of pages: 261
Weight: 1270 g
Dimensions: 235 x 155 x 17 mm
Edition: 2003 ed.
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