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Compound Semiconductors Strained Layers and Devices - Electronic Materials Series 7 (Paperback)
  • Compound Semiconductors Strained Layers and Devices - Electronic Materials Series 7 (Paperback)
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Compound Semiconductors Strained Layers and Devices - Electronic Materials Series 7 (Paperback)

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£109.99
Paperback 337 Pages / Published: 14/03/2014
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During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu- mulation of new materials and devices with enhanced performance made pos- sible by strain. 1989-1999 have been very good years for the strained-Iayer- devices. Several breakthroughs were made in the growth and doping technology of strained layers. New devices were fabricated as a results of these break- throughs. Before the advent of strain layer epitaxy short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) regions of the spectrum were not accessi- ble to the photonic devices. Short wavelength Light Emitting Diodes (LEDs) and Laser Diodes (LDs) have now been developed using III-Nitride and II-VI strained layers. Auger recombination increases rapidly as the bandgap narrows and temperature increases. Therefore it was difficult to develop mid-IR (2 to 5 f. Lm range) lasers. The effect of strain in modifying the band-structure and suppressing the Auger recombination has been most spectacular. It is due to the strain mediated band-structure engineering that mid-IR lasers with good per- formance have been fabricated in several laboratories around the world. Many devices based on strained layers have reached the market place. This book de- scribes recent work on the growth, characterization and properties o(compound semiconductors strained layers and devices fabricated using them.

Publisher: Springer-Verlag New York Inc.
ISBN: 9781461370000
Number of pages: 337
Weight: 539 g
Dimensions: 235 x 155 x 19 mm
Edition: 2000 ed.

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