1996 International Conference on Simulation of Semiconductor Processes and Devices: Sispad '96, September 2-4, 1996, Toyo University, Hakusan Campus, Tokyo, Japa (Paperback)IEEE Electron Devices Society (author)
Paperback 184 Pages / Published: 01/01/1996
- Not available
This conference is aimed at providing an opportunity for the presentation and discussion of the recent topics in process, device and circuit modeling for semiconductors. The proceedings contains all papers presented at the conference which are carefully selected by experts in the field. A valuable source and indispensable for all scientists and engineers engaged in research and development in semiconductor devices, the proceedings include a wide range of TCAD algorithms to user interfacesProcess Modeling; Impurity Modeling; Future Device Modeling; Advanced Silicon Device Modeling; Equipment and Topography Modeling; Mesh Generation and Circuit Model
Number of pages: 184
Weight: 408 g
Dimensions: 298 x 216 mm
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